A review: aluminum nitride MEMS contour-mode resonator

被引:22
作者
Hou Yunhong [1 ]
Zhang Meng [1 ]
Han Guowei [1 ]
Si Chaowei [1 ]
Zhao Yongmei [1 ,2 ]
Ning Jin [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, State Key Lab Transducer Technol, Beijing 100083, Peoples R China
关键词
MEMS contour-mode resonator; AlN; magnetron sputtering; inductively coupled plasma (ICP) etching; the temperature stability; quality factor (Q);
D O I
10.1088/1674-4926/37/10/101001
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR.
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页数:9
相关论文
共 69 条
  • [51] Shang Zhengguo, 2013, J SEMICOND, V34
  • [52] Molybdenum etching using an SF6, BCl3 and Ar based recipe for high aspect ratio MEMS device fabrication
    Sharma, J.
    Fernando, S. N.
    Deng, W.
    Singh, N.
    Tan, W. M.
    [J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2013, 23 (07)
  • [53] AlN film SAW resonator integrated with metal structure
    Shu, Lin
    Jiang, Jianying
    Peng, Bin
    Wang, Yu
    Liu, Xingzhao
    [J]. ELECTRONICS LETTERS, 2015, 51 (05) : 379 - 380
  • [54] Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas
    Shul, RJ
    Willison, CG
    Bridges, MM
    Han, J
    Lee, JW
    Pearton, SJ
    Abernathy, CR
    MacKenzie, JD
    Donovan, SM
    Zhang, L
    Lester, LF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1621 - 1626
  • [55] High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
    Smith, SA
    Wolden, CA
    Bremser, MD
    Hanser, AD
    Davis, RF
    Lampert, WV
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (25) : 3631 - 3633
  • [56] Stratton F P, 2004, 2004 P 2004 IEEE INT
  • [57] A 586 MHz Microcontroller Compensated MEMS Oscillator Based on Ovenized Aluminum Nitride Contour-Mode Resonators
    Tazzoli, A.
    Kuo, N. -K.
    Rinaldi, M.
    Pak, H.
    Fry, D.
    Bail, D.
    Stevens, D.
    Piazza, Gianluca
    [J]. 2012 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS), 2012, : 1055 - 1058
  • [58] Tazzoli A, 2011, P EL DEV M 1988 IEDM
  • [59] Thalhammer R, 2005, P MICR S 2005 IEEE M
  • [60] Decompressive craniectomy in neurocritical care
    Wang, Jia-Wei
    Li, Jin-Ping
    Song, Ying-Lun
    Tan, Ke
    Wang, Yu
    Li, Tao
    Guo, Peng
    Li, Xiong
    Wang, Yan
    Zhao, Qi-Huang
    [J]. JOURNAL OF CLINICAL NEUROSCIENCE, 2016, 27 : 1 - 7