RAMAN-SCATTERING OF SIC - APPLICATION TO THE IDENTIFICATION OF HETEROEPITAXY OF SIC POLYTYPES

被引：116

作者：

OKUMURA, H

SAKUMA, E

LEE, JH

MUKAIDA, H

MISAWA, S

ENDO, K

YOSHIDA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1134 / 1136

页数：3

共 10 条

[1]

Air Force Cambridge Research Laboratories (U.S.)

[2]

University of South Carolina in: Silicon Carbide, 1974, SILICON CARBIDE 1973

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[5]

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PHYSICAL REVIEW B, 1986, 33 (08) :5721-5729

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[9] SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS OF 3C-SIC [J].

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[10] SCHOTTKY-BARRIER DIODES ON 3C-SIC [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (08) :766-768

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