IMPROVED PERFORMANCE OF SILICON AVALANCHE OSCILLATORS MOUNTED ON DIAMOND HEAT SINKS

被引:47
作者
SWAN, CB
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 09期
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D O I
10.1109/PROC.1967.5915
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1617 / &
相关论文
共 3 条
[1]  
BERMAN R, 1965, PHYSICAL PROPERTIES
[2]   TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].
CROWELL, CR ;
SZE, SM .
APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&
[3]   IMPORTANCE OF PROVIDING A GOOD HEAT SINK FOR AVALANCHING TRANSIT TIME OSCILLATOR DIODES [J].
SWAN, CB .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (03) :451-&