PHOTO-LUMINESCENCE STUDIES OF THE AMPHOTERIC BEHAVIOR OF CARBON AND GERMANIUM IN GAAS

被引:15
作者
REYNOLDS, DC
LITTON, CW
SMITH, EB
YU, PW
BAJAJ, KK
机构
[1] WRIGHT STATE UNIV,GRAD RES CTR,DAYTON,OH 45435
[2] UNIVERSAL ENERGY SYST INC,DAYTON,OH 45432
关键词
D O I
10.1016/0038-1098(82)90016-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:827 / 830
页数:4
相关论文
共 12 条
[1]   HIGH-INTENSITY MAGNETIC-FIELDS FOR THE IDENTIFICATION AND STUDY OF DONORS IN EPITAXIAL GALLIUM-ARSENIDE [J].
AFSAR, MN ;
BUTTON, KJ ;
MCCOY, GL .
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1980, 1 (03) :513-524
[2]   RELIABLE FAR-INFRARED PHOTOCONDUCTIVITY METHOD TO IDENTIFY A VARIETY OF RESIDUAL DONORS IN EPITAXIAL GAAS [J].
AFSAR, MN ;
BUTTON, KJ ;
MCCOY, GL .
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1980, 1 (01) :145-158
[3]   OBSERVATION OF SHALLOW RESIDUAL DONORS IN HIGH-PURITY EPITAXIAL GAAS BY MEANS OF PHOTO-LUMINESCENCE SPECTROSCOPY [J].
ALMASSY, RJ ;
REYNOLDS, DC ;
LITTON, CW ;
BAJAJ, KK ;
MCCOY, GL .
SOLID STATE COMMUNICATIONS, 1981, 38 (11) :1053-1056
[4]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[5]   CHARACTERIZATION OF DONORS IN GAAS EPITAXIAL-FILMS BY FAR-INFRARED PHOTOCONDUCTIVE TECHNIQUES [J].
COOKE, RA ;
HOULT, RA ;
KIRKMAN, RF ;
STRADLING, RA .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (06) :945-953
[6]   RESIDUAL DONORS IN HIGH-PURITY GALLIUM-ARSENIDE EPITAXIALLY GROWN FROM VAPOR-PHASE [J].
OZEKI, M ;
KITAHARA, K ;
NAKAI, K ;
SHIBATOMI, A ;
DAZAI, K ;
OKAWA, S ;
RYUZAN, O .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) :1617-1622
[7]  
STILLMAN GE, 1971, SOLID STATE COMMUN, V9, P245
[8]   MAGNETO-OPTICAL STUDY OF SHALLOW DONORS IN TRANSMUTATION-DOPED GAAS [J].
STOELINGA, JHM ;
LARSEN, DM ;
WALUKIEWICZ, W ;
AGGARWAL, RL ;
BOZLER, CO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1978, 39 (08) :873-877
[9]  
STRADLING RA, 1972, I PHYS C SER, V17, P65
[10]   SILICON AS A RESIDUAL DONOR IN HIGH-PURITY GAAS [J].
WOLFE, CM ;
KORN, DM ;
STILLMAN, GE .
APPLIED PHYSICS LETTERS, 1974, 24 (02) :78-80