VAPOR GROWTH OF INP FOR MESFETS

被引：28
作者：
CHEVRIER, J
ARMAND, M
HUBER, AM
LINH, NT
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 04期
关键词：
D O I：
10.1007/BF02652894
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：745 / 761
页数：17
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