ANALYSIS ON ELECTRIC-FIELD EFFECT IN AL/SRTIO3/YBA2CU3OY STRUCTURE

被引：13

作者：

MATSUI, K

AWAJI, T

HIRANO, T

FUJII, T

SAKUTA, K

KOBAYASHI, T

机构：

[1] Department of Electrical Engineering, Osaka University, Toyonaka, Osaka, 560

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 9B期

关键词：

YBA2CU3OY; SRTIO3; FIELD-EFFECT TRANSISTOR (FET); SUPERCONDUCTOR; BARDEEN-STEPHEN MODEL;

D O I：

10.1143/JJAP.31.L1342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar-type Al/(100)SrTiO3/(001)YBa2Cu3Oy metal-insulator-superconductor field-effect transistors (MISFETs) were investigated experimentally and theoretically. The applied gate field induces the change of the carrier concentration in YBa2Cu3Oy channel (or conducting layer thickness), which in turn modulates the critical current J(c) through the flux-creep model and flux-flow resistivity rho(t) through the Bardeen-Stephen model. Theoretical results explained, to a certain extent, the observed field effect in the MISFET semiquantitatively.

引用

页码：L1342 / L1344

页数：3

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