PHOTON-GATED PERSISTENT SPECTRAL HOLE BURNING BY DONOR-ACCEPTOR ELECTRON-TRANSFER IN TETRAPHENYLPORPHINE HALOGENATED ANTHRACENE SYSTEMS

被引：8

作者：

SUZUKI, H

SHIMADA, T

HIRATSUKA, H

机构：

[1] NTT Opto-electronics Laboratories, Tokai

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 09期

关键词：

D O I：

10.1063/1.349058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photon-gated persistent spectral hole burning was observed for metal-free tetraphenylporphine with halogenated anthracene derivatives in poly(methylmethacrylate) or poly(ethylene) at liquid-helium temperatures. The hole formation yield was markedly dependent on the polymer matrices and the sample composition as well as on the gating wavelength. The irreversible broadening of holes in the systems measured by temperature cycling experiment was smaller than that by proton tautomerization of tetraphenylporphine. We concluded that the hole formation mechanism is donor-acceptor electron transfer on the basis of combined analysis of the matix and acceptor concentration dependence of hole formation yield, the action spectrum of the gating photon and the photoproduct spectrum.

引用

页码：4671 / 4678

页数：8

共 33 条

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