INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER

被引：53

作者：

BLOSS, WL ^{[1
]}

SHAM, LJ ^{[1
]}

VINTER, V ^{[1
]}

机构：

[1] TECH UNIV MUNICH, DEPT PHYS, D-8046 GARCHING, FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.43.1529

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Intravalley exchange and correlation are found to induce a first-order transition at low densities in the inversion layer, lowering the valley degeneracy. For the n channel on Si(100) surface, the reduction from two valleys to one occurs roughly below 3×1011 cm-2. The one-valley phase with domain structure yields activated conductivity and other observed low-density behavior. © 1979 The American Physical Society.

引用

页码：1529 / 1532

页数：4

共 26 条

[21] SJOSTRAND ME, 1968, SURF SCI, V58, P72
[22] EVIDENCE FOR A MOBILITY EDGE IN INVERSION LAYERS
STERN, F
[J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2762 - 2765
[23] STERN F, 1974, CRC CRIT R SOLID ST, V4, P500
[24] HALL-EFFECT MEASUREMENTS ON SILICON INVERSION LAYERS
THOMPSON, JP
[J]. PHYSICS LETTERS A, 1978, 66 (01) : 65 - 66
[25] IS THE HALL-EFFECT IN SILICON INVERSION LAYERS CONSISTENT WITH MACROSCOPIC INHOMOGENEITIES
THOMPSON, JP
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (05): : 527 - 533
[26] LOCAL EXCHANGE-CORRELATION POTENTIAL FOR SPIN POLARIZED CASE .1.
VONBARTH, U
HEDIN, L
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13): : 1629 - +

← 1 2 3 →