INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER

被引：54

作者：

BLOSS, WL ^{[1
]}

SHAM, LJ ^{[1
]}

VINTER, V ^{[1
]}

机构：

[1] TECH UNIV MUNICH, DEPT PHYS, D-8046 GARCHING, FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.43.1529

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Intravalley exchange and correlation are found to induce a first-order transition at low densities in the inversion layer, lowering the valley degeneracy. For the n channel on Si(100) surface, the reduction from two valleys to one occurs roughly below 3×1011 cm-2. The one-valley phase with domain structure yields activated conductivity and other observed low-density behavior. © 1979 The American Physical Society.

引用

页码：1529 / 1532

页数：4

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