DIELECTRICALLY ISOLATED SATURATING CIRCUITS

被引：5

作者：

LEE, FH

机构：

[1] Motorola Company, Semiconductor Products Division, Phoenix, Ariz

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 09期

关键词：

D O I：

10.1109/T-ED.1968.16422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A description of the three main substrate preparation processes to achieve silicon dioxide dielectric isolation are described. The use of dielectric isolation for high-speed and low-power circuits is outlined, with calculations of saturation resistance and transient characteristics. Introduction of carrier lifetime-reducing gold into a dielectrically isolated wafer can cause problems, which are delineated. Final results are listed and photomicrographs of working circuits are presented. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：645 / &