ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES

被引：417

作者：

CHADI, DJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574366

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：834 / 837

页数：4

共 26 条

[1] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS
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BARAFF, GA
HAMANN, DR
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[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
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[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[3] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 335 - 343
[4] SURFACE PHASES OF GAAS(100) AND ALAS(100)
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BAUER, RS
CHIARADIA, P
HANSSON, GV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 797 - 801
[5] SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE
BACHRACH, RZ
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2): : 115 - 144
[6] THEORETICAL-STUDY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF THE CIS-4X4 RECONSTRUCTED GAAS(100)SURFACE
CHADI, DJ
TANNER, C
IHM, J
[J]. SURFACE SCIENCE, 1982, 120 (01) : L425 - L430
[7] VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE GA(111) SURFACE OF GAAS
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (21) : 1911 - 1914
[8] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082
[9] ATOMIC-STRUCTURE OF POLAR (111) SURFACES OF GAAS AND ZNSE
CHADI, DJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 944 - 946
[10] THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1984, 29 (02): : 785 - 792

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