SINGLE-MODE OPERATION OF BURIED HETEROSTRUCTURE LASERS BY LOSS STABILIZATION

被引：37
作者：
HENRY, CH
LOGAN, RA
MERRITT, FR
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 11期
关键词：
D O I：
10.1109/JQE.1981.1070673
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2196 / 2204
页数：9
相关论文
共 9 条
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[8]   GAAS-ALXGA1-X AS BURIED-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY WITH AL0.65GA0.35AS (GE-DOPED) LIQUID-PHASE EPITAXY OVERGROWN LAYER FOR CURRENT INJECTION CONFINEMENT [J].
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