PHOTOLUMINESCENCE STUDY OF MBE-GROWN FILMS OF ZNS

被引:94
|
作者
MCCLEAN, IP
THOMAS, CB
机构
[1] Dept. of Electr. Eng., Bradford Univ.
关键词
D O I
10.1088/0268-1242/7/11/019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Polycrystalline films of ZnS with a slight excess of S have been grown on (100) Si by congruent sublimation from a single Knudsen cell. Intense blue emission is observed at 460 nm from room-temperature photoluminescence studies, and is ascribed to S-Zn vacancies acting as self-activated (SA) centres. The emission is quenched by the addition of Zn from a second Knudsen cell, which also causes the growth of a luminescent peak centred on 678 nm. No reduction in the SA luminescence is seen when co-sublimating ZnS and AgS, implying that it is not possible to remove the S-vacancy completely. Quenching of the blue emission occurs when Mn, instead of Zn, is added to the ZnS films, providing direct evidence of Mn incorporation into Zn vacancies. At the optimum Mn concentration, the intensity of the Mn emission at 580 nm is comparable to the blue emission (460 nm) from the undoped ZnS films.
引用
收藏
页码:1394 / 1399
页数:6
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