FABRICATION OF GAAS-ALGAAS NANO-HETEROSTRUCTURES BY THROUGH-UHV PROCESSING

被引：0

作者：

KATAYAMA, Y

ISHIKAWA, T

GOTO, S

MORISHITA, Y

NOMURA, Y

LOPEZ, M

TANAKA, N

MATSUYAMA, I

机构：

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two kinds of approaches to fabricate GaAs-AlGaAs nano-heterostructure using through-UHV processing are described. One is a method in which quantum-wire structures are formed on the pre-patterned substrates using selective growth on specific crystal orientation of facets. The other is a method which uses a combination of epitaxy and in situ pattern formation in an ultra-high vacuum (UHV) multi-chamber system. These two methods are examined, while putting emphasis on the cleanliness of the interfaces obtained and the crystalline defects produced during processing.

引用

页码：433 / 440

页数：8

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