MODEL CALCULATION OF SURFACE STATES IN SILICON

被引：23
作者：
JONES, RO
机构：
来源：
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1972年 / 5卷 / 13期
关键词：
D O I：
10.1088/0022-3719/5/13/011
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1615 / &
相关论文
共 43 条
[1]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[2]   SURFACE BANDS OF SILICON (III) SLABS BY A LCAO METHOD [J].
ALSTRUP, I .
SURFACE SCIENCE, 1970, 20 (02) :335-&
[3]   CALCULATION OF SURFACE STATES OF SILICON [J].
ALSTRUP, I .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 45 (01) :209-&
[4]  
ANDERSON PW, 1963, CONCEPTS SOLIDS, P28
[5]   ON THE THEORY OF SURFACE STATES [J].
ANTONCIK, E .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) :137-145
[6]   PARAMETRIC APPROACH TO SURFACE SCREENING OF A WEAK EXTERNAL ELECTRIC FIELD [J].
APPELBAUM, JA ;
BARAFF, GA .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1246-+
[7]   ON THEORY OF SURFACE STATES OF ELECTRONS IN SEMICONDUCTORS [J].
BARTOS, I .
SURFACE SCIENCE, 1969, 15 (01) :94-&
[8]   OPTICAL ABSORPTION AT SURFACE OF A SEMICONDUCTOR [J].
BARTOS, I .
PHYSICA STATUS SOLIDI, 1969, 33 (02) :779-&
[9]  
BLOUNT WI, 1962, SOLID ST PHYS, V13, P362
[10]   SURFACE STATES IN SI [J].
BORTOLANI, V ;
CALANDRA, C ;
SGHEDONI, A .
PHYSICS LETTERS A, 1971, A 34 (03) :193-+
12345