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- [11] SPONTANEOUS AND STIMULATED EMISSION INVOLVING N ISOELECTRONIC TRAP IN GAAS1-XPX-N AND IN 1-XGAXP-NBULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (01): : 108 - 109HOLONYAK, N
- [12] NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX .2. MODEL CALCULATION OF ELECTRONIC STATES N-GAMMA AND NX AT LOW-TEMPERATUREPHYSICAL REVIEW B, 1977, 16 (04): : 1597 - 1615HSU, WYDOW, JDWOLFORD, DJSTREETMAN, BG
- [13] PUMPING OF GAAS1-XPX - N(AT 77 DEGREES K, FOR X LESS THAN OR EQUAL TO 0.53) BY AN ELECTRON-BEAM FROM A GAS PLASMAJOURNAL OF APPLIED PHYSICS, 1973, 44 (12) : 5517 - 5521HOLONYAK, NCAMPBELL, JCLEE, MHVERDEYEN, JTJOHNSON, WLCRAFORD, MGFINN, D
- [14] SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND CW LASER OPERATION (77 DEGREES K) OF IN1-XGAXPAPPLIED PHYSICS LETTERS, 1971, 18 (04) : 160 - &BURNHAM, RDHOLONYAK, NKEUNE, DLSCIFRES, DR
- [15] DEPENDENCE OF TOTAL STIMULATED LIGHT POWER FROM CW OPERATED GAAS JUNCTION LASERS AT 77 DEGREES K ON DRIVING CURRENT AND LASER LENGTHINDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1971, 9 (04) : 243 - +CHAKRAVARTI, ANRAKSHIT, SBISWAS, SN
- [16] RECOMBINATION SCHEME + INTRINSIC GAP VARIATION IN GAAS1-XPX SEMICONDUCTORS FROM ELECTRON BEAM + P-N DIODE EXCITATION (77 + 300 DEGREES K E)APPLIED PHYSICS LETTERS, 1964, 5 (07) : 144 - &CUSANO, DACARLSON, ROFENNER, GE
- [17] STIMULATED AND LASER-EMISSION INVOLVING NITROGEN ISOELECTRONIC IMPURITIES IN ALXGA1-XAS (X=0.39, 77DEGREESK)APPLIED PHYSICS LETTERS, 1976, 29 (05) : 309 - 311MAKITA, YGONDA, SIJUIN, H
- [18] IN1-XGAXP-N LASER OPERATION (CW,77DEGREES) ON NITROGEN A-LINE TRANSITION IN INDIRECT CRYSTALS (X GREATER THAN OR EQUAL TO 0.74) AND IN DIRECT CRYSTALS ABOVE FUNDAMENTAL BAND EDGE (X GREATER THAN OR EQUAL TO 3.71)APPLIED PHYSICS LETTERS, 1972, 20 (01) : 11 - &HOLONYAK, NSCIFRES, DRMACKSEY, HMDUPUIS, RD
- [19] RESONANT ENHANCEMENT OF RECOMBINATION PROBABILITY ASSOCIATED WITH ISOELECTRONIC TRAP STATES IN SEMICONDUCTOR ALLOYS IN1-XGAXP-N LASER OPERATION (77 DEGREES K) IN YELLOW-GREEN LAMBDA LESS-THAN-OR-EQUAL-TO 5560 A, H-OMEGA GREATER-THAN-OR-EQUAL-TO 2.23 EVJOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5134 - 5140DUKE, CBSMITH, DLKLEIMAN, GGMACKSEY, HMHOLONYAK, NDUPUIS, RDCAMPBELL, JC
- [20] HETEROJUNCTION LASER OPERATION OF N-FREE AND N-DOPED GAAS1-YPY (Y=0.42-0.43, LAMBDA-SIMILAR TO 6200 A, 77 DEGREESK) NEAR DIRECT-INDIRECT TRANSITION (Y SIMILAR TO YC APPROXIMATELY EQUAL TO 0.46)JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3556 - 3561COLEMAN, JJHOLONYAK, NLUDOWISE, MJWRIGHT, PDGROVES, WOKEUNE, DLCRAFORD, MG