STIMULATED EMISSION AND LASER OPERATION (CW, 77 DEGREES K) OF DIRECT AND INDIRECT GAAS1-XPX ON NITROGEN ISOELECTRONIC TRAP TRANSITIONS

被引：10

|

作者：

SCIFRES, DR

ZACK, GW

HOLONYAK, N

KEUNE, DL

MACKSEY, HM

DUPUIS, RD

GROVES, WO

CRAFORD, MG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.1661505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2368 / &

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[1] STIMULATED EMISSION INVOLVING NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX
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[2] SPONTANEOUS AND STIMULATED EMISSION IN GAAS1-XPX AND IN1-XGAXP DOPED WITH NITROGEN ISOELECTRONIC TRAP
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[3] SPONTANEOUS AND STIMULATED CARRIER LIFETIMES (77 DEGREES K) IN GAAS1-XPX AND GAAS1-XPX - N
LEE, MH
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[4] STIMULATED EMISSION AND LASER OPERATION (CW, 77 DEGREES K) ASSOCIATED WITH DEEP ISOELECTRONIC TRAPS IN INDIRECT SEMICONDUCTORS
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[5] EFFECT OF COMPOSITION AND PRESSURE ON NITROGEN ISOELECTRONIC TRAP IN GAAS1-XPX
NELSON, RJ
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COLEMAN, JJ
LAZARUS, D
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[6] LIFETIME SPECTRA (77 DEGREES K) OF NITROGEN-DOPED GAAS1-XPX
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[7] STIMULATED EMISSION IN AN INDIRECT SEMICONDUCTOR - N ISOELECTRONIC TRAP-ASSISTED RECOMBINATION IN GAAS1-XPX,X GREATER THAN 0.44)
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KEUNE, DL
APPLIED PHYSICS LETTERS, 1971, 19 (08) : 256 - &
[8] 1-DIMENSIONAL GAAS LASER ARRAYS FOR CW OPERATION AT 77 DEGREES K
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C95 - &
[9] LASER OPERATION OF GAAS1-XPX-N(X=0.37,77 DEGREES K) ON PHOTOPUMPED NN3 PAIR TRANSITIONS
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[10] ROOM-TEMPERATURE CW OPERATION OF GAAS1-XPX DIODE-PUMPED YAG-ND LASER
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