CENTERS OF THERMAL-DONOR NUCLEATION IN SILICON

被引：0
|
作者：
MARKEVICH, VP
MURIN, LI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 02期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An investigation was made of the characteristics of thermal donor formation at T = 315-450-degrees-C in Si:O crystals subjected to a brief preliminary heat treatment at T = 500-800-degrees-C. The initial stages of thermal donor accumulation in crystals subjected to this preliminary treatment was controlled by the process of generation of thermal-donor nucleation centers. The steady-state concentration of these nucleation centers and the characteristic time of their formation were determined as a function of the annealing temperature and of the oxygen content of the crystals. It was established that there were at least three oxygen atoms in each nucleation center.
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页码：158 / 161
页数：4
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