THERMAL-DECOMPOSITION OF GERMANE

被引：25

作者：

HALL, LH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 11期

关键词：

D O I：

10.1149/1.2404049

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1593 / &

共 10 条

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511

[2] EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J].

BERKENBL.M ;

REISMAN, A ;

LIGHT, TB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :966-&

[3] Germanium. VIII. The physical properties of monogermane [J].

Corey, RB ;

Laubengayer, AW ;

Dennis, LM .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1925, 47 :112-117

[4] EPITAXIAL GROWTH OF GERMANIUM ON SINGLE CRYSTAL SPINEL [J].

DUMIN, DJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :749-&

[5]

HALL L, UNPUBLISHED RESULTS

[6]

HOGNESS TR, 1933, J AM CHEM SOC, V54, P3583

[7] PYROMETRIC MEASUREMENTS OF SI GE AND GAAS WAFERS BETWEEN 100 DEGREES AND 700 DEGREES C [J].

JONA, F ;

WENDT, HR .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3637-&

[8] EPITAXIAL DEPOSITION OF GERMANIUM ONTO SEMI-INSULATING GAAS [J].

PAPAZIAN, SA ;

REISMAN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :961-&

[9] KINETICS OF REACTION HI-[3] GE [J].

REISMAN, A ;

BERKENBL.M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) :146-&

[10] THE THERMAL DECOMPOSITION OF GERMANE .1. KINETICS [J].

TAMARU, K ;

BOUDART, M ;

TAYLOR, H .

JOURNAL OF PHYSICAL CHEMISTRY, 1955, 59 (09) :801-805

← 1 →