MINORITY-CARRIER LIFETIME IN SILICON AFTER AR+ AND SI+ IMPLANTATION

Minority carrier lifetime changes in MOS diodes implanted with 200 keV Ar+ or 80 keV Si+ in the dose range 1011 to 1016 ions/cm2 are investigated and related to the implanted ions and the damage in the substrate. Lifetime degradation observed after Ar+ implantation varies with the dose. A factor of 105 is achieved by implanting a dose of 1015 Ar+/cm−2. Contrarily Si+ implantation does not affect the lifetime up to 1014 Si+/cm2. For a higher Si+ dose the lifetime is reduced by four orders of magnitude. Transmission electron microscopy studies reveal no defects for implants up to 1012 Ar+/cm2 and 1014 Si+/cm2. At higher argon dose bubble like defects are identified. For Ar+ and Si+ ion doses close to the amorphization dose stacking faults and dislocation loops are observed additionally. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA