LASER-INDUCED MELTING OF THIN CONDUCTING FILMS .2. HEAT-DISSIPATING SUBSTRATES

被引:4
作者
COHEN, SS
WYATT, PW
BERNSTEIN, JB
机构
[1] Massachusetts Institute of Technology, Lincoln Laboratory, Lexingtor
关键词
Laser Beams - Metal Melting;
D O I
10.1109/16.83716
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We study the application of pulsed laser radiation in the melting of thin conducting films deposited on heat-dissipating substrates. This situation is markedly different then encountered in the adiabatic system. Real applications involve conducting films deposited on thin insulating films grown on conductive substrates such as silicon. The heat flow from the conducting film to the silicon substrate must be accounted for in attempting to describe real deletive and additive laser-induced processes. The present model makes use of the observed thermal profiles in aluminum in the adiabatic approximation discussed in part I. We assume a constant temperature profile along the normal to the surface of the conducting film. This allows us to obtain closed-form analytic expressions for the important thermal quantities of the combined system. Good agreement between theory and experiment is obtained.
引用
收藏
页码:2051 / 2057
页数:7
相关论文
共 9 条
[1]  
Carslaw H. S., 1947, CONDUCTION HEAT SOLI
[2]   A MODEL FOR THE REFLECTIVITY IN LASER-SUBSTRATE INTERACTIONS [J].
COHEN, SS ;
WYATT, PW .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5102-5105
[3]   LASER-INDUCED MELTING OF THIN CONDUCTING FILMS .1. THE ADIABATIC APPROXIMATION [J].
COHEN, SS ;
WYATT, PW ;
CHAPMAN, GH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (09) :2042-2050
[4]  
Jaeger J. C, 1955, Q J MECH APPL MATH, V8, P101, DOI DOI 10.1093/QJMAM/8.1.101
[5]  
LIU YS, 1989, LASER MICROFABRICATI
[6]  
MEBED MM, 1982, 16TH SE SEM THERM SC, P21
[7]   TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J].
NISSIM, YI ;
LIETOILA, A ;
GOLD, RB ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :274-279
[8]  
Touloukian Y.S., 1970, THERMOPHYSICAL PROPE, V1st
[9]  
WHIPPLE RTP, 1954, PHILOS MAG, V45, P1225