HIGH ELECTRIC-FIELD CONDUCTION AND MAGNETORESISTANCE IN A-GE AT 4.2-K

被引：6

作者：

YOSHIDA, A

NAKASHIMA, S

IEDA, M

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 35-6卷 / JAN-期

关键词：

D O I：

10.1016/0022-3093(80)90631-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：421 / 425

页数：5

相关论文

共 50 条

[41] ROLE OF CONDUCTION ELECTRONS IN ELECTRIC-FIELD GRADIENTS OF ORDERED METALS
WATSON, RE
GOSSARD, AC
YAFET, Y
PHYSICAL REVIEW, 1965, 140 (1A): : A375 - &
[42] ELECTRIC-FIELD INDUCED PARALLEL CONDUCTION IN GAAS ALGAAS HETEROSTRUCTURES
HENDRIKS, P
ZWAAL, EAE
DUBOIS, JGA
BLOM, FAP
WOLTER, JH
JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 302 - 306
[43] MEASUREMENT OF THE CONDUCTION CURRENT ELECTRIC-FIELD IN AN ELF BAND (REVIEW)
KOCHANOV, ES
ZIMIN, EF
RADIOTEKHNIKA I ELEKTRONIKA, 1982, 27 (07): : 1249 - 1267
[44] DRIFT VELOCITY AND MOBILITY OF ELECTRONICS IN SILICON AT 4.2 DEGREES IN DEPENDENCE ON ELECTRIC-FIELD
DEIMEL, P
ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1972, A 27 (01): : 26 - +
[45] HIGH ELECTRIC-FIELD MOBILITY IN INSB
KARTHEUSER, E
EVRARD, R
SOLID STATE COMMUNICATIONS, 1972, 10 (02) : 211 - +
[46] A THEORY OF HIGH ELECTRIC-FIELD TRANSPORT
HU, GY
OCONNELL, RF
PHYSICA A, 1988, 149 (1-2): : 1 - 25
[47] SOUND AMPLIFICATION IN HIGH ELECTRIC-FIELD
GALPERIN, YM
PARDAEV, A
FIZIKA TVERDOGO TELA, 1973, 15 (04): : 1299 - 1302
[48] CONDUCTIVITY OF SEMICONDUCTORS IN HIGH ELECTRIC-FIELD
BRYKSIN, VV
FIZIKA TVERDOGO TELA, 1972, 14 (10): : 2902 - &
[49] Drift of excitons in an inhomogeneous electric field in silicon at 4.2 K
Musaev A.M.
Russian Physics Journal, 1997, 40 (5) : 462 - 464
[50] OBSERVATION OF INTERFACE TRAPS IN THE SILICON CONDUCTION-BAND AT THE (100)SI/SIO2 INTERFACE AT 4.2-K
ANDERSON, WR
WHEELER, RG
MA, TP
APPLIED PHYSICS LETTERS, 1992, 61 (09) : 1107 - 1109

← 1 2 3 4 5 →