CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD

被引:99
作者
CHANG, CC
机构
关键词
D O I
10.1016/0039-6028(70)90153-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:283 / &
相关论文
共 29 条
[1]   SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].
ABBINK, HC ;
BROUDY, RM ;
MCCARTHY, GP .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&
[2]  
AMELIO GF, 1968, THESIS GEORGIA I TEC
[3]   The effect of a photoelectric compound [J].
Auger, P .
JOURNAL DE PHYSIQUE ET LE RADIUM, 1925, 6 :205-U12
[4]   ON NATURE OF ANNEALED SEMICONDUCTOR SURFACES [J].
BAUER, E .
PHYSICS LETTERS A, 1968, A 26 (11) :530-&
[5]  
Bishop H. E., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P1635
[6]   OXYGEN STICKING COEFFICIENTS ON CLEAN (111) SILICON SURFACES [J].
CAROSELLA, CA ;
COMAS, J .
SURFACE SCIENCE, 1969, 15 (02) :303-+
[7]  
CHANG C, IN PRESS
[8]  
CHANG CC, 1969, STRUCTURE CHEM SOLID, P77
[9]  
CHANG CWJ, TO BE PUBLISHED
[10]   CARBON CONTAMINATION OF SI(111) SURFACES [J].
CHARIG, JM ;
SKINNER, DK .
SURFACE SCIENCE, 1969, 15 (02) :277-&