CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] AMELIO GF, 1968, THESIS GEORGIA I TEC

[3] The effect of a photoelectric compound [J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1925, 6 : 205 - U12

[4] ON NATURE OF ANNEALED SEMICONDUCTOR SURFACES [J]. PHYSICS LETTERS A, 1968, A 26 (11) : 530 - &

[5] Bishop H. E., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P1635

[6] OXYGEN STICKING COEFFICIENTS ON CLEAN (111) SILICON SURFACES [J]. SURFACE SCIENCE, 1969, 15 (02) : 303 - +

[7] CHANG C, IN PRESS

[8] CHANG CC, 1969, STRUCTURE CHEM SOLID, P77

[9] CHANG CWJ, TO BE PUBLISHED

[10] CARBON CONTAMINATION OF SI(111) SURFACES [J]. SURFACE SCIENCE, 1969, 15 (02) : 277 - &

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &

[2] AMELIO GF, 1968, THESIS GEORGIA I TEC

[3] The effect of a photoelectric compound [J]. JOURNAL DE PHYSIQUE ET LE RADIUM, 1925, 6 : 205 - U12

[4] ON NATURE OF ANNEALED SEMICONDUCTOR SURFACES [J]. PHYSICS LETTERS A, 1968, A 26 (11) : 530 - &

[5] Bishop H. E., 1969, British Journal of Applied Physics (Journal of Physics D), V2, P1635

[6] OXYGEN STICKING COEFFICIENTS ON CLEAN (111) SILICON SURFACES [J]. SURFACE SCIENCE, 1969, 15 (02) : 303 - +

[7] CHANG C, IN PRESS

[8] CHANG CC, 1969, STRUCTURE CHEM SOLID, P77

[9] CHANG CWJ, TO BE PUBLISHED

[10] CARBON CONTAMINATION OF SI(111) SURFACES [J]. SURFACE SCIENCE, 1969, 15 (02) : 277 - &