RESONANT TUNNELING IN AMORPHOUS DOUBLE-BARRIER STRUCTURES

被引：2

作者：

PORRASMONTENEGRO, N

ANDA, EV

机构：

[1] UNIV AUTONOMA MADRID, DEPT FIS MAT CONDENSADA, E-28049 MADRID, SPAIN

[2] UNIV VALLE, DEPT FIS, AA 25-360, CALI, COLOMBIA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.43.6706

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the Kubo formula for the electrical conductivity, and a tight-binding Hamiltonian represented on a Bethe lattice, we have developed a formalism to study the electronic and transport properties of amorphous double-barrier structures. Quantum size effects are analyzed as a function of the parameters of the heterostructure. The theoretical results are compared with I-V experimental curves.

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页码：6706 / 6711

页数：6

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