SPIN DEPENDENT RECOMBINATION AT THE SILICON SILICON DIOXIDE INTERFACE

被引：48
作者：
LENAHAN, PM
JUPINA, MA
机构：
[1] Pennsylvania State University, University Park
来源：
COLLOIDS AND SURFACES | 1990年 / 45卷
关键词：
D O I：
10.1016/0166-6622(90)80023-W
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect. © 1990.
引用
收藏
页码：191 / 211
页数：21
相关论文
共 49 条
[1]  
Abragam A., 1970, ELECTRON PARAMAGNETI
[2]   ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS [J].
CAPLAN, PJ ;
POINDEXTER, EH ;
DEAL, BE ;
RAZOUK, RR .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5847-5854
[3]   DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].
CASTAGNE, R ;
VAPAILLE, A .
SURFACE SCIENCE, 1971, 28 (01) :157-+
[4]   OBSERVATION OF SPIN-DEPENDENT THERMAL EMISSION FROM DEEP LEVELS IN SEMICONDUCTORS [J].
CHEN, MC ;
LANG, DV .
PHYSICAL REVIEW LETTERS, 1983, 51 (05) :427-429
[5]   PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].
DERBENWICK, GF ;
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2151-2156
[6]  
DRESSENDORFER PV, 1989, IONIZING RAD EFFECTS
[7]   VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J].
EERNISSE, EP ;
DERBENWICK, GF .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1534-1539
[8]   OXYGEN VACANCY MODEL FOR E'/1 CENTER IN SIO2 [J].
FEIGL, FJ ;
FOWLER, WB ;
YIP, KL .
SOLID STATE COMMUNICATIONS, 1974, 14 (03) :225-229
[9]   SURFACE RECOMBINATION IN SEMICONDUCTORS [J].
FITZGERALD, DJ ;
GROVE, AS .
SURFACE SCIENCE, 1968, 9 (02) :347-+
[10]   SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].
GROVE, AS ;
FITZGERALD, DJ .
SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+
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