SILICON (3) 7X7 STRUCTURE

被引：25

作者：

RIDGWAY, JWT

HANEMAN, D

机构：

[1] School of Physics, University of New South Wales

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 09期

关键词：

D O I：

10.1063/1.1652806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Si(111) 7 × 7 structure has been observed within 9 sec of cleaving Si crystals at 850°C. Analysis shows that sufficient Fe to be regarded as essential for the structure cannot diffuse from the bulk in the time, although Li or Cu could. Sufficient contamination to form 1% of a monolayer could form by surface diffusion from the crystal sides, provided surface diffusion coefficients considerably greater than 5 × 10 -5 cm2 sec-1 at 750°C were applicable. © 1969 The American Institute of Physics.

引用

页码：265 / &

共 7 条

[1] MATHEMATICAL TREATMENT OF COMPETITIVE SURFACE + VOLUME DIFFUSION PROCESSES [J].