EFFECT OF GRAIN-BOUNDARIES IN SILICON ON MINORITY-CARRIER DIFFUSION LENGTH AND SOLAR-CELL EFFICIENCY

被引:34
作者
DAUD, T [1 ]
KOLIWAD, KM [1 ]
ALLEN, FG [1 ]
机构
[1] UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
关键词
D O I
10.1063/1.90250
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1009 / 1011
页数:3
相关论文
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[2]   ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J].
HACKETT, WH .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1649-&
[3]  
MCKELVEY JP, 1966, SOLID STATE SEMICOND, P461