PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS

被引：106
作者：
NES, E
WASHBURN, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 09期
关键词：
D O I：
10.1063/1.1660771
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3562 / &
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