RELATION BETWEEN GROWTH STRIATIONS AND RESISTIVITY VARIATIONS IN SILICON-CRYSTALS

被引：4

作者：

DEKOCK, AJR ^{[1
]}

SEVERIN, PJ ^{[1
]}

ROKSNOER, PJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 22卷 / 01期

关键词：

D O I：

10.1002/pssa.2210220118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：163 / 166

页数：4

共 23 条

[1]

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) :702-708

[3]

BURTSCHER J, 1973, SEMICONDUCTOR SILICO

[4]

CISZEK TF, 1969, SEMICONDUCTOR SILICO

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SOLID-STATE ELECTRONICS, 1972, 15 (12) :1383-+

[6]

DEKOCK AJR, 1973, SEMICONDUCTOR SILICO

[7]

DIKHOFF JAM, 1963, PHILIPS TECH REV, V25, P195

[8] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J].

EDWARDS, WD .

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[9] OBSERVATIONS ON IMPERFECTIONS IN SILICON MATERIAL USING SPREADING RESISTANCE PROBE [J].

GUPTA, DC ;

CHAN, JY ;

WANG, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1611-&

[10] HIGH PRECISION LATTICE PARAMETER MEASUREMENTS BY MULTIPLE BRAGG REFLEXION DIFFRACTOMETRY [J].

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