PHYSICS OF A-SI-H P-I-N DEVICES

P-i-n diodes give information about electronic transport, metastable defects and the density of states in a-Si:H. The forward and reverse currents arise from a generation-recombination mechanism involving mid-gap defect states and can be used to study metastability in an actual device structure. Extracting information about electronic processes and junction properties depends on accurate numerical models which are now available. The application of p-i-n diodes in large matrix addressed image sensor arrays is illustrated.