TRANSMISSION ELECTRON-MICROSCOPY STUDY OF THE FORMATION OF A CONTAMINATION LAYER ON THE SURFACE OF POROUS SILICON

被引：0
|
作者：
KATCKI, J
BUGAJSKI, M
机构：
[1] Institute of Electron Technology, Warsaw
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1994年 / 5卷 / 05期
关键词：
D O I：
10.1007/BF00921252
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
During observation of porous silicon by transmission electron microscopy a thin contamination layer was formed. This process was ten times faster for porous silicon than for the crystalline material. The aim of this work was to identify the material of the contamination layer and to explain mechanism(s) of rapid changes in spot patterns during electron beam exposure. The material of the layer was identified beta-SiC. The mechanism of formation of the beta-SiC layer is discussed in detail.
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页码：280 / 283
页数：4
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