METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF CDSE/ZNSE STRAINED-LAYER SINGLE QUANTUM-WELLS AND SUPERLATTICES ON GAAS SUBSTRATES

被引：49

作者：

FUJITA, S

WU, YH

KAWAKAMI, Y

FUJITA, S

机构：

[1] Department of Electrical Engineering, Kyoto University

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 11期

关键词：

D O I：

10.1063/1.352005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high-energy electron diffraction (RHEED) oscillations that continued up to three cycles were observed during metalorganic molecular-beam epitaxial growth of CdSe on a ZnSe buffer grown on a GaAs substrate, showing two-dimensional layer-by-layer growth despite the large lattice mismatch (6.85%). Based on this result, we could definitely control the growth of CdSe/ZnSe strained-layer single quantum wells with well widths of 1-3 monolayers and of short-period superlattices under in situ RHEED monitoring. Optical properties strongly demonstrated the successful formation of well-defined structures consisting of these highly strained II-VI semiconductor multilayers.

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页码：5233 / 5239

页数：7

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