ROLE OF ARGON INVOLVED IN PLASMA-DEPOSITED AMORPHOUS SI-H FILMS

被引:41
作者
TANAKA, K
YAMASAKI, S
NAKAGAWA, K
MATSUDA, A
OKUSHI, H
MATSUMURA, M
IIZIMA, S
机构
关键词
D O I
10.1016/0022-3093(80)90640-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:475 / 480
页数:6
相关论文
共 9 条
[1]   USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J].
CONNELL, GAN ;
PAWLIK, JR .
PHYSICAL REVIEW B, 1976, 13 (02) :787-804
[2]  
IIZIMA S, 1979, 3RD P INT C SOL STAT
[3]  
KNIGHTS JC, 1978, 10TH P C SOL STAT DE, P101
[4]  
MATSUDA A, 1980, J NON-CRYST, V35
[5]   PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].
MOUSTAKAS, TD ;
ANDERSON, DA ;
PAUL, W .
SOLID STATE COMMUNICATIONS, 1977, 23 (03) :155-158
[6]  
MOUSTAKAS TD, UNPUBLISHED
[7]   NEW DEVELOPMENT IN STUDY OF AMORPHOUS SILICON HYDROGEN ALLOYS - STORY OF O [J].
PAESLER, MA ;
ANDERSON, DA ;
FREEMAN, EC ;
MODDEL, G ;
PAUL, W .
PHYSICAL REVIEW LETTERS, 1978, 41 (21) :1492-1495
[8]   SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].
SPEAR, WE ;
LECOMBER, PG .
SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196
[9]   EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF PLASMA DEPOSITED AMORPHOUS HYDROGENATED SILICON [J].
TSAI, CC ;
FRITZSCHE, H .
SOLAR ENERGY MATERIALS, 1979, 1 (1-2) :29-42