GAAS/ALGAAS LENSED LIGHT-EMITTING DIODE BY THE MELTBACK AND REGROWTH IN LIQUID-PHASE EPITAXY

被引：1

作者：

HAHM, SH

CHO, GS

KWON, YS

机构：

[1] Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Cheongryang, Seoul, 130-650

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 5B期

关键词：

MICRO-LENS; MELTBACK ETCH; LIQUID PHASE EPITAXY; LIGHT EMITTING DIODE; INTEGRATION;

D O I：

10.1143/JJAP.30.L910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaAs micro-lens was fabricated for light emitting diode (LED) applications using the liquid phase epitaxy (LPE) meltback technique. The lenses can be used to enhance the optical power of AlGaAs/GaAs LED's. The meltback technique using the LPE provides simple fabrication procedures which is not easily achieved in the conventional lensed structure.

引用

页码：L910 / L913

页数：4

共 5 条

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