HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS

被引：47

作者：

GUHA, S ^{[1
]}

ARORA, BM ^{[1
]}

SALVI, VP ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 05期

关键词：

D O I：

10.1016/0038-1101(77)90135-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：431 / &

共 13 条

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[9] DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER [J].

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