EFFECT OF GRAIN-BOUNDARIES ON THE FORMATION OF LUMINESCENT POROUS SILICON FROM POLYCRYSTALLINE SILICON FILMS

被引：20

作者：

GUYADER, P

JOUBERT, P

GUENDOUZ, M

BEAU, C

SARRET, M

机构：

[1] Groupe de Microélectronique et Visualisation, Université de Rennes 1, Institut Universitarie de Technologie, 22302 Lannion-Cedex

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 14期

关键词：

D O I：

10.1063/1.112869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Luminescent porous silicon can be obtained by electrochemical etching under illumination from n-type polycrystalline silicon which has been fabricated by solid phase crystallization of in situ doped amorphous films deposited by low pressure chemical vapor deposition. The analyses of the nanostructures by microscopy show that the pore orientations mainly follow the current flow which is channeled by macropores located at grain boundaries. The luminescence results obtained from this porous polycrystalline silicon are comparable to those obtained from porous samples of single-crystals silicon. (C) 1994 American Institute of Physics.

引用

页码：1787 / 1789

页数：3

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