CHARGE CARRIER PROPERTIES IN P-TYPE LAYERS OF SILICON ON SAPPHIRE

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327

[2] AYERZA J, 1980, THESIS TOULOUSE

[3] HIGH INJECTION EFFECTS ON CONDUCTIVITY AND CARRIER LIFETIME IN P-TYPE SILICON MATERIAL [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (05): : 945 - 959

[4] BIELLEDASPET D, 1978, SOLID STATE ELECTRON, V21, P121

[5] BIELLEDASPET D, 1980, REV PHYS APPL, V15, P203

[6] NON UNIFORM RECOMBINATION IN THIN SILICON-ON-SAPPHIRE FILMS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1563 - 1569

[7] DEEP LEVELS WITHIN FORBIDDEN GAP OF SILICON-ON-SAPPHIRE FILMS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 415 - &

[8] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND CARRIER CONCENTRATION IN SILICON-ON-SAPPHIRE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3139 - &

[9] EERNISSE EP, 1973, SOLID STATE ELECTRON, V16, P315, DOI 10.1016/0038-1101(73)90004-X

[10] CARRIER LIFETIME MEASUREMENTS IN SILICON SOLAR-CELL BASE AND EMITTER FROM TRANSITORY LASER-PULSE PHOTORESPONSES [J]. REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (01): : 209 - 221

[1] CROSS-SECTIONAL ELECTRON-MICROSCOPY OF SILICON ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 325 - 327

[2] AYERZA J, 1980, THESIS TOULOUSE

[3] HIGH INJECTION EFFECTS ON CONDUCTIVITY AND CARRIER LIFETIME IN P-TYPE SILICON MATERIAL [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (05): : 945 - 959

[4] BIELLEDASPET D, 1978, SOLID STATE ELECTRON, V21, P121

[5] BIELLEDASPET D, 1980, REV PHYS APPL, V15, P203

[6] NON UNIFORM RECOMBINATION IN THIN SILICON-ON-SAPPHIRE FILMS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1563 - 1569

[7] DEEP LEVELS WITHIN FORBIDDEN GAP OF SILICON-ON-SAPPHIRE FILMS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 415 - &

[8] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND CARRIER CONCENTRATION IN SILICON-ON-SAPPHIRE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3139 - &

[9] EERNISSE EP, 1973, SOLID STATE ELECTRON, V16, P315, DOI 10.1016/0038-1101(73)90004-X

[10] CARRIER LIFETIME MEASUREMENTS IN SILICON SOLAR-CELL BASE AND EMITTER FROM TRANSITORY LASER-PULSE PHOTORESPONSES [J]. REVUE DE PHYSIQUE APPLIQUEE, 1979, 14 (01): : 209 - 221