NONLINEAR ABSORPTION IN A GAAS WAVE-GUIDE JUST ABOVE HALF THE BAND-GAP

被引：49
作者：
VILLENEUVE, A
YANG, CC
STEGEMAN, GI
IRONSIDE, CN
SCELSI, G
OSGOOD, RM
机构：
[1] DIPARTIMENTO INGN ELETTRICA,I-90128 PALERMO,ITALY
[2] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND
[3] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 05期
基金：
加拿大自然科学与工程研究理事会; 美国国家科学基金会;
关键词：
D O I：
10.1109/3.303676
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nonlinear absorption in a GaAs waveguide is measured with photon energies near half the band-gap energy by employing single-beam and pump-probe attenuation techniques. Two-photon absorption followed by free-carrier absorption are the dominant nonlinear absorption mechanisms that are included in a model that fits the experimental data.
引用
收藏
页码：1172 / 1175
页数：4
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