PREPARATION OF ZNO FILMS BY REACTIVE EVAPORATION

被引：36
作者：
JIN, M
YING, LS
机构：
[1] Institute of Optoelectronic Materials and Devices, Shandong University
来源：
THIN SOLID FILMS | 1994年 / 237卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(94)90230-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc oxide (ZnO) films were deposited on heated glass substrates by evaporating zinc chloride (ZnCl2) in oxygen. Structural, optical and electrical properties of the deposited films were investigated. High-transparency films with resistivity as low as 3.5 x 10(-3) Omega cm could be prepared by adjusting parameters. The energy gap of ZnO film was evaluated as 3.3 eV from optical absorption measurements. The electron carrier densities in the range (4-12) x 10(19) cm(-3) and mobilities of 10-40 cm(2) V-1 s(-1) were observed.
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页码：16 / 18
页数：3
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