INTERFACE RECOMBINATION REDUCTION BY (NH4)2SX-PASSIVATION IN METALORGANIC CHEMICAL VAPOR-DEPOSITION REGROWN GAALAS/GAAS BURIED HETEROSTRUCTURE LASERS AND ESTIMATION OF THRESHOLD CURRENTS IN MICROCAVITY SURFACE EMITTING LASERS

被引：21
作者：
TAMANUKI, T
KOYAMA, F
IGA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 10期
关键词：
AMMONIUM SULFIDE PASSIVATION; MOCVD REGROWTH; MICROFABRICATION; MICROCAVITY SURFACE EMITTING LASER;
D O I：
10.1143/JJAP.31.3292
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ammonium sulfide [(NH4)2Sx] treatment has been applied to a metalorganic chemical vapor deposition (MOCVD) regrowth process for GaAlAs/GaAs buried heterostructure (BH) lasers to reduce the nonradiative interface recombination. A mirrorlike Ga0.9Al0.1As layer was successfully grown on Ga0.7Al0.3As by introducing sulfur treatment before regrowth. The interface recombination velocity along the side wall of the active region was significantly reduced. This fabrication technology is expected to be effective in the realization of ultralow-threshold microcavity lasers.
引用
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页码：3292 / 3295
页数：4
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