SHORT-TERM CHARGE ANNEALING IN ELECTRON-IRRADIATED SILICON DIOXIDE

被引：18

作者：

SIMONS, M

HUGHES, HL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1971年 / NS18卷 / 06期

关键词：

D O I：

10.1109/TNS.1971.4326420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：106 / +

页数：1

共 9 条

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[6] RAPID ANNEALING OF PULSE-RADIATION-INDUCED SPACE CHARGE IN SILICON DIOXIDE [J].

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[7] SOME OBSERVATIONS ON CHARGE BUILDUP AND RELEASE IN SILICON DIOXIDE IRRADIATED WITH LOW ENERGY ELECTRONS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :966-+

[8] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES [J].

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[9]

ZAININGER KH, 1967, RCA REV, V28, P208

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