SODIUM SULFIDE TREATED (100) AND MISORIENTED (110)-GAAS SURFACES

被引：0

作者：

LIU, D ^{[1
]}

ZHANG, T ^{[1
]}

LARKINS, EC ^{[1
]}

CHIANG, TT ^{[1
]}

LARUE, RA ^{[1
]}

HARRIS, JS ^{[1
]}

SIGMON, T ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES <D> | 1989年 / 96期

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D O I：

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have obtained photoluminescence (PL), sheet carrier density, deep level transient spectroscopy (DLTS) and x-ray and uv photoemission spectroscopy (XPS and UPS) information for sodium sulfide treated and untreated GaAs surfaces. The samples used are MBE grown (100) and 6-degrees misoriented (110) n-type GaAs. We find that the sulfide treatment reduces the surface recombination velocity for the treated (100) surface more than that of the (110) surface. The surface Fermi level is 0.8eV below the conduction band minimum after sulfide treatment.

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页码：371 / 374

页数：4

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