PHOTOEMISSION WITH PICOSECOND LASERS - FAST ELECTRON DYNAMICS AT THE GAAS (110) SURFACE

被引：10

作者：

HAIGHT, R ^{[1
]}

SILBERMAN, JA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DEPT PHYS SCI,YORKTOWN HTS,NY 10598

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 12期

关键词：

D O I：

10.1109/3.40642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2556 / 2561

页数：6

共 17 条

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[7] SURFACE INTERVALLEY SCATTERING ON GAAS(110) - DIRECT OBSERVATION WITH PICOSECOND LASER PHOTOEMISSION [J].

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[8]

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[9] ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES [J].

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[10] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

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