THE PREPARATION OF MODULATION-DOPED GAAS/GAAS1-XPX STRAINED-LAYER SUPERLATTICES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：1
作者：
BIEFELD, RM
FRITZ, IJ
DOYLE, BL
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 05期
关键词：
D O I：
10.1007/BF02657908
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：335 / 340
页数：6
相关论文
共 33 条
[1]  
BAUSER E, 1981, APPL PHYS LETT, V37, P1001
[2]   THE USE OF METALORGANIC CHEMICAL VAPOR-DEPOSITION TO PREPARE DEVICE QUALITY GA(ASP) STRAINED-LAYER SUPERLATTICES [J].
BIEFELD, RM .
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (04) :193-199
[3]  
BIEFELD RM, 1983, J ELECTRON MATER, V12, P903, DOI 10.1007/BF02655302
[4]   INDEPENDENTLY VARIABLE BAND-GAPS AND LATTICE-CONSTANTS IN GAASP STRAINED-LAYER SUPER-LATTICES [J].
BIEFELD, RM ;
GOURLEY, PL ;
FRITZ, IJ ;
OSBOURN, GC .
APPLIED PHYSICS LETTERS, 1983, 43 (08) :759-761
[5]   MORPHOLOGY OF GAAS1-XPX SUPERLATTICES GROWN BY MOCVD AND CHLORIDE VPE [J].
BLAKESLEE, AE ;
KIBBLER, A ;
WANLASS, MW .
SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) :339-345
[6]   MODULATION-DOPED (AL,GA)AS/ALAS SUPERLATTICE - ELECTRON-TRANSFER INTO ALAS [J].
DRUMMOND, TJ ;
FRITZ, IJ .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :284-286
[7]   MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS [J].
DRUMMOND, TJ ;
MASSELINK, WT ;
MORKOC, H .
PROCEEDINGS OF THE IEEE, 1986, 74 (06) :773-822
[8]   EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
KOPP, W ;
MORKOC, H ;
HESS, K ;
CHO, AY ;
STREETMAN, BG .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5689-5690
[9]  
DRUMMOND TJ, 1987, COMMUNICATION
[10]   ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225
1234