PLASMA-ENHANCED REACTIVELY EVAPORATED DEPOSITION OF SIO2-FILMS

被引：6

作者：

SHKLYAEV, AA

MEDVEDEV, AS

机构：

[1] Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk

来源：

APPLIED SURFACE SCIENCE | 1995年 / 89卷 / 01期

关键词：

D O I：

10.1016/0169-4332(95)00005-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon dioxide thin films have been prepared from a SiO molecule flow in oxygen at (1.2-5) X 10(-3) Torr using a high-frequency glow discharge with a power density of 0.1 W cm(-2). The films were analyzed in common with SiOx films deposited from SiO and O-2 at 10(-4)-10(-2) Torr. The SiO molecule flow was created by reacting oxygen and silicon at 1200 degrees C. It was demonstrated by ellipsometry, X-ray photoelectron spectroscopy and infrared spectroscopy that using the high-frequency glow discharge gave films at T-c that did not contain impurity OH groups and which has characterizing properties near thermal SiO2. Comparison with other low-temperature dielectric films containing impurity OH groups showed that they did not constitute the basic principle underlying the enhanced electroconductivity of such films, while the cooling length of hot electrons was defined by the form of hydrogen in the films.

引用

页码：49 / 55

页数：7

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