MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION

被引：27
作者：
MORKOC, H [1 ]
DRUMMOND, TJ [1 ]
THORNE, RE [1 ]
KOPP, W [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 12期
关键词：
D O I：
10.1143/JJAP.20.L913
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L913 / L916
页数：4
相关论文
共 14 条
[1]   ELECTRONIC-PROPERTIES OF A SEMICONDUCTOR SUPER-LATTICE .1. SELF-CONSISTENT CALCULATION OF SUBBAND STRUCTURE AND OPTICAL-SPECTRA [J].
ANDO, T ;
MORI, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (05) :1518-1527
[2]   ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].
DINGLE, R ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667
[3]   EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
DRUMMOND, TJ ;
MORKOC, H ;
HESS, K ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5231-5234
[4]   DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386
[5]  
DRUMMOND TJ, J APPL PHYS
[6]  
DRUMMOND TJ, J CRYS GROWTH
[7]   IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].
HESS, K .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486
[8]   ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES [J].
HIYAMIZU, S ;
NANBU, K ;
MIMURA, T ;
FUJII, T ;
HASHIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (05) :L378-L380
[9]  
KEEVER M, J APPL PHYS
[10]   GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].
MORKOC, H ;
WITKOWSKI, LC ;
DRUMMOND, TJ ;
STANCHAK, CM ;
CHO, AY ;
STREETMAN, BG .
ELECTRONICS LETTERS, 1980, 16 (19) :753-754
12