SELECTIVE, ANISOTROPIC ETCHING OF SIO2 AND PSG IN A CHF3/SF6, RIE PLASMA

被引：0
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作者：
WHITCOMB, EC [1 ]
机构：
[1] ROCKWELL INT,ANAHEIM,CA 92803
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 03期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C104 / C104
页数：1
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