ALXGA1-XAS AS INTERVALLEY SCATTERING RATES FROM FIELD-ASSISTED PHOTOEMISSION SPECTROSCOPY

被引：5

作者：

PARKER, TR ^{[1
]}

PHILLIPS, CC ^{[1
]}

MAY, PG ^{[1
]}

机构：

[1] SHARP LABS EUROPE LTD,OXFORD OX4 4GA,ENGLAND

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.51.4264

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Field-assisted photoemission has been observed from a semiconductor heterostructure with a GaAs-Al0.25Ga0.75As emitter layer and has yielded spectroscopic information on hot-electron energy distributions in the low-electron-density limit. Energy-distribution curves of electrons photoemitted from the structure under high electric fields have been measured as a function of electric field and photon energy. Computer-modeled values for the AlxGa1-xAs intervalley coupling constants have been deduced as follows: DΓL=(0.30±0.10)×109 eV cm-1, DLL=(0.70±0.10)×109 eV cm-1, DXX=(0.70±0.05)×109 eV cm-1, DLX=(0.70±0.15) ×109 eV cm-1, and DΓX=(1.0±0.2)×109 eV cm-1. © 1995 The American Physical Society.

引用

页码：4264 / 4271

页数：8

共 12 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].