PRESSURE-DEPENDENCE OF THE BAND-GAPS IN SI QUANTUM WIRES

被引：9
|
作者：
YEH, CY
ZHANG, SB
ZUNGER, A
机构：
[1] National Renewable Energy Laboratory, Golden
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期
关键词：
D O I：
10.1063/1.111219
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The pressure coefficients a of interband transitions in (001) silicon wires are calculated using a plane-wave basis and carefully fitted empirical pseudopotentials. We find purely red shifts (a < 0). Their magnitudes, as well as changes with wire sizes can be interpreted in terms of the ''truncated crystal model'' which describes the wire conduction bands as linear combination of the lowest bulk conduction bands along the GAMMA-X line.
引用
收藏
页码：3545 / 3547
页数：3
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