FABRICATION AND CHARACTERISTICS OF IMPROVED STRAINED QUANTUM-WELL GAINALAS GAIN-COUPLED DFB LASERS

被引：20
作者：
BORCHERT, B
STEGMULLER, B
GESSNER, R
机构：
[1] Siemens AG, Corporate R&D, 8000 Munich 83
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 02期
关键词：
SEMICONDUCTOR LASERS; LASERS AND LASER APPLICATIONS;
D O I：
10.1049/el:19930141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of improved 1.58 mum GaInAlAs strained quantum-well gain-coupled DFB lasers are presented. Besides the excellent spectral properties (singlemode yield of 75% and a sidemode suppression ratio of 45 dB), 20 mW output power and CW operation at 80-degrees-C have been obtained. A record 3 dB bandwidth of 11 GHz was measured. Spectral or dynamical instabilities due to the loss grating have not been observed.
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收藏
页码：210 / 211
页数：2
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