FABRICATION AND CHARACTERISTICS OF IMPROVED STRAINED QUANTUM-WELL GAINALAS GAIN-COUPLED DFB LASERS

被引：20
作者：
BORCHERT, B
STEGMULLER, B
GESSNER, R
机构：
[1] Siemens AG, Corporate R&D, 8000 Munich 83
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 02期
关键词：
SEMICONDUCTOR LASERS; LASERS AND LASER APPLICATIONS;
D O I：
10.1049/el:19930141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of improved 1.58 mum GaInAlAs strained quantum-well gain-coupled DFB lasers are presented. Besides the excellent spectral properties (singlemode yield of 75% and a sidemode suppression ratio of 45 dB), 20 mW output power and CW operation at 80-degrees-C have been obtained. A record 3 dB bandwidth of 11 GHz was measured. Spectral or dynamical instabilities due to the loss grating have not been observed.
引用
收藏
页码：210 / 211
页数：2
相关论文
共 10 条
[1]   HIGH-SPEED ULTRALOW CHIRP 1.55-MU-M MBE GROWN GAINAS ALGAINAS MQW DFB LASERS [J].
BLEZ, M ;
KAZMIERSKI, C ;
MATHOORASING, D ;
QUILLEC, M ;
GILLERON, M ;
NAKAJIMA, H ;
SERMAGE, B .
ELECTRONICS LETTERS, 1992, 28 (11) :1040-1042
[2]   1.55 MU-M GAIN-COUPLED QUANTUM-WELL DISTRIBUTED FEEDBACK LASERS WITH HIGH SINGLE-MODE YIELD AND NARROW LINEWIDTH [J].
BORCHERT, B ;
DAVID, K ;
STEGMULLER, B ;
GESSNER, R ;
BESCHORNER, M ;
SACHER, D ;
FRANZ, G .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (11) :955-957
[3]  
BORCHERT B, 1992, 13TH P IEEE INT SEM, P15
[4]   GAIN-COUPLED DFB LASERS VERSUS INDEX-COUPLED AND PHASE-SHIFTED DFB LASERS - A COMPARISON BASED ON SPATIAL HOLE BURNING CORRECTED YIELD [J].
DAVID, K ;
MORTHIER, G ;
VANKWIKELBERGE, P ;
BAETS, RG ;
WOLF, T ;
BORCHERT, B .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1714-1723
[5]   BASIC ANALYSIS OF AR-COATED, PARTLY GAIN-COUPLED DFB LASERS - THE STANDING WAVE EFFECT [J].
DAVID, K ;
BUUS, J ;
BAETS, RG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (02) :427-433
[6]   REDUCTION OF EFFECTIVE LINEWIDTH ENHANCEMENT FACTOR-ALPHA-EFF OF DFB LASERS WITH COMPLEX COUPLING-COEFFICIENTS [J].
KUDO, K ;
SHIM, JI ;
KOMORI, K ;
ARAI, S .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) :531-534
[7]   GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR-LASERS WITH AN ABSORPTIVE CONDUCTION-TYPE INVERTED GRATING [J].
LUO, Y ;
CAO, HL ;
DOBASHI, M ;
HOSOMATSU, H ;
NAKANO, Y ;
TADA, K .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (07) :692-695
[8]  
MORHIER G, 1990, IEEE PHOTONIC TECH L, V2, P170
[9]  
NAKANO Y, 1991, 17TH P EUR C OPT COM, P1
[10]   LONG-WAVELENGTH INGAASP/INP DISTRIBUTED FEEDBACK LASERS INCORPORATING GAIN-COUPLED MECHANISM [J].
TSANG, WT ;
CHOA, FS ;
WU, MC ;
CHEN, YK ;
LOGAN, RA ;
SERGENT, AM ;
BURRUS, CA .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (03) :212-215
1