VALENCE SEMICONDUCTORS, GERMANIUM AND SILICON

被引：0
作者：
FAN, HY
机构：
来源：
USPEKHI FIZICHESKIKH NAUK | 1958年 / 65卷 / 01期
关键词：
D O I：
10.3367/UFNr.0065.195805d.0111
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：111 / 132
页数：22
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共 256 条
[1]   THEORY OF THE GALVANOMAGNETIC EFFECTS IN GERMANIUM [J].
ABELES, B ;
MEIBOOM, S .
PHYSICAL REVIEW, 1954, 95 (01) :31-37
[2]  
ADAMS EN, 1952, PHYS REV, V85, P4
[3]   THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J].
AIGRAIN, P .
PHYSICA, 1954, 20 (11) :978-982
[4]   DIE TRANSVERSALEN GALVANOMAGNETISCHEN EFFEKTE IN HALBLEITERN [J].
APPEL, J .
ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 1954, 9 (02) :167-174
[5]  
BALTENSPERGER K, 1953, PHIL MAG, V44, P1355
[6]   DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].
BARDEEN, J ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1950, 80 (01) :72-80
[7]   OPTICAL PROPERTIES OF SEMICONDUCTORS .2. INFRA-RED TRANSMISSION OF GERMANIUM [J].
BECKER, M ;
FAN, HY .
PHYSICAL REVIEW, 1949, 76 (10) :1530-1531
[8]  
BECKER M, 1952, PHYS REV, V85, P730
[9]   MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF HOLES IN GERMANIUM [J].
BENEDICT, TS .
PHYSICAL REVIEW, 1953, 91 (06) :1565-1566
[10]   MICROWAVE OBSERVATION OF THE COLLISION FREQUENCY OF ELECTRONS IN GERMANIUM [J].
BENEDICT, TS ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1953, 89 (05) :1152-1153
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